TFT Photo Resists
This positive type of photo resists can be used for formation of TFT devices in TFT LCD.
The photo resists can be applied to spin, slit/spin or slit coating processes and the viscosity can be adjusted by requirement.
Characteristics
- Good coating uniformity
- Good CD uniformity
- Low film loss
- High throughput
- High sensitivity
- High resolution
- Wide process window
- Easy to remove
- Good adhesion
Resin Black matrix (RBM) photo resist can be used for light shielding on color filter (CF). The optical density (OD) can be designed by requirement. They can be applied to G2 to G8.5 substrates with slit/spin, spin or slit coating processes.
This negative type of photo spacer (PS) photo resist can be used as the spacer for Cell Gap in TFT-LCD. The photo resist is created by customer requirement and can be applied to G2 to G8.5 CF substrates with slit/spin, spin or slit coating processes. In addition, the viscosity can be designed.
The over coating (OC) materials can be used on color filter (CF) to provide excellent flatness on CF. The OC can be applied to G2 to G8.5 substrates with slit/spin, spin or slit coating processes.
The Lift-Off photo resists (Lift-Off PR) are negative type and need post-exposure baking process. One of major applications of the Lift-Off PR is used for PMOLED manufacturing process.
The negative type of color photo resists (CPR) can be used for color filter (CF). The application of CPR on CF substrate is from G2.0 to G8.5 and they also can be utilized for slit, slit/spin or spin coating processes. In addition, the chromaticity of CPR can be designed by requirement. Red, Green, Blue and other colors are available.